NJVMJD112T4G
2.0 A, 100 V NPN Darlington Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Darlington Transistors
Avnet Manufacturer Part #: NJVMJD112T4G
Secondary Manufacturer Part#: NJVMJD112T4G
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RoHS 10 Compliant -
Tariff Charges
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("1"" Suffix)
- Lead Formed Version in 16 mm Tape and Reel (""T4"" Suffix)
- Surface Mount Replacements for TIP110-TIP117 Series
- Monolithic Construction With Built-in Base-Emitter Shunt Resistors
- High DC Current GainhFE = 2500 (Typ) @ IC = 2.0 Adc
- Complementary Pairs Simplifies Designs
- NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- PbFree Packages are Available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 100 | ||
| 2 | ||
| 1000 | ||
| 3 | ||
| 150 °C | ||
| 20 | ||
| AEC-Q101 | ||
| TO-252 (DPAK) | ||
| Surface Mount | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: