NGTB40N60L2WG
IGBT, 600V 40A FS2 Low VCEsat
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Manufacturer:onsemi
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: NGTB40N60L2WG
Secondary Manufacturer Part#: NGTB40N60L2WG
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RoHS 10 Compliant -
Tariff Charges
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for Low VCEsat
- 5 s Short-Circuit Capability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.65 | ||
| 600 | ||
| 80 | ||
| 3 | ||
| 175 °C | ||
| 417 | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290055 |
| Schedule B: | 8541290080 |
Factory Lead Time: