NGTB40N120L3WG
IGBT, Ultra Field stop - 1200V 40A, Low VCEsat
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Manufacturer:onsemi
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: NGTB40N120L3WG
Secondary Manufacturer Part#: NGTB40N120L3WG
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RoHS 10 Compliant -
Tariff Charges
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co-packaged freewheeling diode with a low forward voltage.
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for Low VCEsat
- These are Pb-Free Devices
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.55 V | ||
| 1.2 kV | ||
| 160 | ||
| 3 | ||
| 175 °C | ||
| 454 W | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290055 |
| Schedule B: | 8541290080 |
Factory Lead Time: