NGTB30N65IHL2WG
IGBT, 650V 30A FS2 Induction Heating
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Manufacturer:onsemi
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: NGTB30N65IHL2WG
Secondary Manufacturer Part#: NGTB30N65IHL2WG
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RoHS 10 Compliant -
Tariff Charges
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co-packaged free wheeling diode with a lowforward voltage.
- Extremely Efficient Trench with Fieldstop Technology
- Low Switching Loss Reduces System Power Dissipation
- Optimized for Low Losses in IH Cooker Application
- TJmax = 175°C
- Soft, Fast Free Wheeling Diode
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.7 V | ||
| 650 V | ||
| 60 | ||
| 3 | ||
| 175 °C | ||
| 300 W | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290055 |
| Schedule B: | 8541290080 |
Factory Lead Time: