NGTB15N120IHWG
IGBT, 15 A, 1200V in TO247
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Manufacturer:onsemi
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: NGTB15N120IHWG
Secondary Manufacturer Part#: NGTB15N120IHWG
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RoHS 10 Compliant -
Tariff Charges
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications.
- Extremely Efficient Trench with Fieldstop Technology
- Low Switching Loss Reduces System Power Dissipation
- Optimized for Low Losses in IH Cooker Application
- This is a Pb-Free Device
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.1 V | ||
| 1.2 kV | ||
| 3 | ||
| 175 °C | ||
| 278 W | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: