NGTB15N120FL2WG
IGBT, 30 A, 2 V, 294 W, 1.2 kV, TO-247, 3 Pins
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Manufacturer:onsemi
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: NGTB15N120FL2WG
Secondary Manufacturer Part#: NGTB15N120FL2WG
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RoHS 10 Compliant -
Tariff Charges
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co-packaged free wheeling diode with a low forward voltage.
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 s Short Circuit Capability
- These are Pb-Free Devices
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2 | ||
| 1.2 | ||
| 30 | ||
| 3 | ||
| 175 °C | ||
| 294 | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
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