NDT456P
P-Channel Enhancement Mode Field Effect Transistor
- RoHS 10 Compliant
- Tariff Charges
The NDT456P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate-source voltage
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 7.5 | ||
| 30 | ||
| 30 | ||
| 3 | ||
| 4 | ||
| 150 °C | ||
| 3 | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |