NDS9945
Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mO
- RoHS 10 Compliant
- Tariff Charges
The NDS9945 is a 60V Dual N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. It is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability
- ±20V gate to source voltage
- 78°C/W thermal resistance, junction to ambient
- 40°C/W thermal resistance, junction to case
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 3.5 | ||
| 100 | ||
| 60 | ||
| 8 | ||
| 150 °C | ||
| 2 | ||
| SOIC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |