NDS352AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mO
Click image to enlarge
Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: NDS352AP
Secondary Manufacturer Part#: NDS352AP
-
RoHS 10 Compliant -
Tariff Charges
The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
- High density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 900 | ||
| 300 | ||
| 30 | ||
| 2.5 | ||
| 3 | ||
| 150 °C | ||
| 500 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Ships
in 1 bus. day