NCV5702DR2G
IGBT Gate Drivers, High-Current, Stand-Alone High Voltage, High Current IGBT Gate Driver
- RoHS 10 Compliant
- Tariff Charges
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| High and Low Side | ||
| Non-Isolated | ||
| Surface Mount | ||
| 59 ns | ||
| Non-Inverting | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| 16 | ||
| 1 | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 54 ns | ||
| 16SOIC | ||
| 7.8 A | ||
| 16 | ||
| IGBT | ||
| AEC-Q100 | ||
| Automotive | ||
| 1 A | ||
| 1 A | ||
| SOIC | ||
| 20 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542310075 |
| Schedule B: | 8542310075 |