NCV51705MNTWG

NCV51705MNTWG is a single 6A high-speed, low-side SiC MOSFET driver. It is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable of delivering the maximum allowable gate voltage to the SiC MOSFET device. By providing a high peak current during turn-on and turn-off, switching losses are also minimized. For improved reliability, dV/dt immunity, and even faster turn-off, it can utilize its onboard charge pump to generate a user-selectable negative voltage rail. For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications, it also provides an externally accessible 5V rail to power the secondary side of digital or high-speed opto isolators. Typical applications include driving SiC MOSFET for automotive applications, automotive inverters, converter, and motor drivers, PFC, AC to DC, and DC to DC converters.

• Automotive qualified to AEC-Q100 with grade 1 temperature range
• High peak output current with split output stages to allow independent turn-ON/Turn-OFF adjustment
• Source capability is 6A, sink capability is 6A
• Extended positive voltage rating for efficient SiC MOSFET operation during the conduction period
• Adjustable, on-board regulated charge pump, negative voltage drive for fast turn-off
• Built-in negative charge pump
• Accessible 5V reference / bias rail for digital oscillator supply
• Adjustable under-voltage lockout, desaturation function
• Operating VDD supply current is 12mA typ (fIN = 100KHz, VEESET = 5V, TJ = 25°C)
• QFN24 package, ambient operating temperature range from -40 to +125°C