NCV5106ADR2G
MOSFET / IGBT Drivers, High Voltage, High and Low Side
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Manufacturer:onsemi
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: NCV5106ADR2G
Secondary Manufacturer Part#: NCV5106ADR2G
- RoHS 10 Compliant
- Tariff Charges
NCV5106ADR2G is a NCV5106 high voltage gate driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in any other high-side + low-side configuration. It uses the bootstrap technique to ensure a proper drive of the high-side power switch. The driver works with 2 independent inputs. Typical applications are xEV half-bridge and full-bridge converters, 48V converters for HEV/EV, and electric power steering.
- High voltage range: up to 600V, dV/dt immunity ±50V/nsec
- Automotive qualified to AEC-Q100 grade 1, outputs in phase with the inputs
- Negative current injection characterized over the temperature range
- Gate drive supply range from 10V to 20V
- Output source/sink current capability 250mA/500mA
- 3.3V and 5V input logic compatible, up to VCC swing on input pins
- Extended allowable negative bridge pin voltage swing to -10V for signal propagation
- Matched propagation delays between both channels
- Independent logic inputs to accommodate all topologies, under VCC lockout (UVLO) for both channels
- SOIC-8 package, 150°C maximum operating junction temperature
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge, High Side, Low Side, Low Sid | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 125 °C | ||
| -40 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |