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NCV5106ADR2G

MOSFET / IGBT Drivers, High Voltage, High and Low Side

Manufacturer:onsemi
Avnet Manufacturer Part #: NCV5106ADR2G
Secondary Manufacturer Part#: NCV5106ADR2G
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

NCV5106ADR2G is a NCV5106 high voltage gate driver IC providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in any other high-side + low-side configuration. It uses the bootstrap technique to ensure a proper drive of the high-side power switch. The driver works with 2 independent inputs. Typical applications are xEV half-bridge and full-bridge converters, 48V converters for HEV/EV, and electric power steering.

  • High voltage range: up to 600V, dV/dt immunity ±50V/nsec
  • Automotive qualified to AEC-Q100 grade 1, outputs in phase with the inputs
  • Negative current injection characterized over the temperature range
  • Gate drive supply range from 10V to 20V
  • Output source/sink current capability 250mA/500mA
  • 3.3V and 5V input logic compatible, up to VCC swing on input pins
  • Extended allowable negative bridge pin voltage swing to -10V for signal propagation
  • Matched propagation delays between both channels
  • Independent logic inputs to accommodate all topologies, under VCC lockout (UVLO) for both channels
  • SOIC-8 package, 150°C maximum operating junction temperature

Technical Attributes

Find Similar Parts

Description Value
Half Bridge, High Side, Low Side, Low Sid
MSL 1 - Unlimited
2
8
125 °C
-40 °C

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542390050
Schedule B: 8542390060
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
Price for: Each
Quantity:
Min:2500  Mult:2500  
USD $: