NCP5304DR2G
MOSFET/IGBT Driver, Half Bridge, 10V to 20V Supply, 500mA Out, 100ns Delay, SOIC-8
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Manufacturer:onsemi
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: NCP5304DR2G
Secondary Manufacturer Part#: NCP5304DR2G
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RoHS 10 Compliant -
Tariff Charges
The NCP5304 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs with cross conduction protection.
- High Voltage Range: Up to 600V
- dV/dt Immunity ±50 V/ns
- Gate Drive Supply Range from 10 V to 20 V
- High and Low Drive Outputs
- Output Source / Sink Current Capability 250 mA / 500 mA
- 3.3 V and 5 V Input Logic Compatible
- Up to Vcc Swing on Input Pins
- Matched Propagation Delays Between Both Channels
- Outputs in Phase with the Inputs
- Cross Conduction Protection with 100ns Internal Fixed Dead Time
- Under Vcc LockOut (UVLO) for Both Channels
- Pin to Pin Compatible with Industry Standards
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Full Bridge|Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| 100 ns | ||
| 3.3V|5V | ||
| Matte Tin | ||
| 260 | ||
| 75 ns | ||
| 160 ns | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| 150 °C | ||
| 125 °C | ||
| -40 °C | ||
| 100 ns | ||
| 10, 30 Ohm | ||
| 8SOIC N | ||
| 0.5 A | ||
| 8 | ||
| IGBT, MOSFET, Mosfet | ||
| 5 x 4 x 1.5 mm | ||
| No | ||
| 500 mA | ||
| 250 mA | ||
| SOIC N | ||
| 20 V | ||
| 10 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: