NCP51810AMNTWG

The NCP51810 high-speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e-mode), high electron mobility transistor (HEMT), gallium nitrade (GaN) power switches in medium-voltage half-bridge DC-DC application. The NCP51810 offers short and matched propagation delays with advanced level shift technology providing -3.5 V to +150 V (typical) common mode voltage range for the high-side drive and -3.5 V to +3.5 V common mode voltage range for the low-side drive. In addition, the device provides stable dV/dt operation rated up to 200 V/ns for both driver output stages in high speed switching applications. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The circuit actively regulates the driver’s bias rails and thus protects against potential gate-source over-voltage under various operating conditions. The NCP51810 offers important protection functions such as independent under-voltage lockout (UVLO), monitoring VDD bias voltage and VDDH and VDDL driver bias and thermal shutdown based on die junction temperature of the device. Programmable dead-time control can be configured to prevent cross-conduction.