NCP51561DADWR2G
5 kVrms Isolated Dual Channel 4.5/9 A Gate Driver 4.5/9A Isolated Dual Channel Gate Driver with 17V UVLO and ENABLE
- RoHS 10 Compliant
- Tariff Charges
The NCP51561 are isolated dual-channel gate drivers with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51561 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively. The NCP51561 offers other important protection functions such as independent under-voltage lockout for both gate drivers and a Dead Time adjustment function.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Half Bridge | ||
| Non-Inverting | ||
| High and Low Side | ||
| Galvanically Isolated | ||
| 39 ns | ||
| TTL | ||
| 260 °C | ||
| 19 ns | ||
| 5 V | ||
| 1.5 W | ||
| 58 ns | ||
| 19 ns | ||
| 58 ns | ||
| 58 ns | ||
| 3 V | ||
| Surface Mount | ||
| 1 | ||
| 2 | ||
| 16 | ||
| 2 | ||
| 2 | ||
| 7.15 mA | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 39 ns | ||
| 16SOIC W | ||
| 9 A | ||
| 16 | ||
| MOSFET, SiC MOSFET, SiC Mosfet | ||
| 10.45 x 7.6 x 2.4 mm | ||
| No | ||
| Extended Industrial | ||
| 9 A | ||
| 4.5 A | ||
| SOIC W | ||
| 5 V | ||
| 3 V | ||
| 3.3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542900000 |
| Schedule B: | 8542900000 |