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NCD57000DWR2G

Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation.

Manufacturer:onsemi
Avnet Manufacturer Part #: NCD57000DWR2G
Secondary Manufacturer Part#: NCD57000DWR2G
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

NCD57000 is a high-current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCD57000 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability.

  • High Current Output (+4/-6 A) at IGBT Miller Plateau Voltages
  • Low Output Impedance for Enhanced IGBT Driving
  • Short Propagation Delays with Accurate Matching
  • Active Miller Clamp to Prevent Spurious Gate Turn-on
  • DESAT Protection with Programmable Delay
  • Negative Voltage (Down to -9 V) Capability for DESAT
  • Soft Turn Off During IGBT Short Circuit
  • IGBT Gate Clamping During Short Circuit
  • IGBT Gate Active Pull Down
  • Tight UVLO Thresholds for Bias Flexibility

Technical Attributes

Find Similar Parts

Description Value
High Side, Low Side, Low Sid
Galvanically Isolated
60 ns
Inverting, Non-Inverting, Non-Inv
MSL 1 - Unlimited
1
16
125 °C
-40 °C
66 ns
7.1 A
7.8 A
5 V
3.3 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542390050
Schedule B: 8542390060
In Stock :  0
Additional inventory
Factory Lead Time: 203 Weeks
Price for: Each
Quantity:
Min:1000  Mult:1000  
USD $:
1000+
$4.00671
2000+
$3.79014
4000+
$3.6904
8000+
$3.59577
16000+
$3.50588