N01S830HAT22IT

The ON Semiconductor serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed Static Random Access Memory, internally organized as 128 K words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. The devices can operate over a wide temperature range of -40°C to +85°C and are available in a 8-lead TSSOP package. The N01S830xA device has two different variations, a HOLD version that allows communication to the device to be paused and a battery back-up (BBU) version to be used with a battery to retain data when power is lost.

• Power Supply Range: 2.5 to 5.5 V
• Very Low Typical Standby Current: < 4 µA
• Very Low Operating Current: < 10 mA
• Simple Serial Interface- Single-bit SPI Access - DUAL-bit and QUAD-bit SPI-like Access
• Flexible Operating Modes- Word Mode- Page Mode - Burst Mode (Full Array)
• High Frequency Read and Write Operation - Clock Frequency 20 MHz
• Functional Options
  - HOLD Pin for Pausing Operation
  - VBAT Pin for Battery-Back up
• Built-in Write Protection (CS High)
• High Reliability
  - Unlimited Write Cycles