MOC8204M
6-pin DIP High Voltage Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
- RoHS 10 Compliant
- Tariff Charges
The MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
- High Voltage: - MOC8204M, BVCEO = 400 V
- Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Technical Attributes
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| Description | Value | |
|---|---|---|
| 80 mA | ||
| Matte Tin | ||
| 260 | ||
| 100 mA | ||
| 400 V | ||
| 5250 Vrms | ||
| Through Hole | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6PDIP White | ||
| 6 | ||
| 8.89 x 6.86 x 3.53 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |