MOC8106SR2VM
6-Pin DIP High BVCEO Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
- RoHS 10 Compliant
- Tariff Charges
The MOC8106M is a 6-Pin DIP High BV CEO Phototransistor Optocouplers It consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
- High BVCEO: 70 V Minimum
- Closely Matched Current Transfer Ratio (CTR)
- Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With
- No Chip-to-Pin 6 Base Connection for Minimum Noise
- Susceptability (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
 
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.15 V | ||
| 60 mA | ||
| Matte Tin | ||
| 260 °C | ||
| 50 mA | ||
| 70 V | ||
| 150@10mA % | ||
| 4170 Vrms | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| -40 to 100 °C | ||
| Open Collector | ||
| 6PDIP SMD White | ||
| 6 | ||
| 8.89 x 6.6 x 3.53 mm mm | ||
| 6 V | ||
| Extended Industrial | ||
| PDIP SMD | 
ECCN / UNSPSC / COO
| Description | Value | 
|---|---|
| Country of Origin: | PROJECTED FEE | 
| ECCN: | EAR99 | 
| HTSN: | 8541498000 | 
| Schedule B: | 8541498000 | 
