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MOC8106SR2VM

6-Pin DIP High BVCEO Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;

Manufacturer:onsemi
Avnet Manufacturer Part #: MOC8106SR2VM
Secondary Manufacturer Part#: MOC8106SR2VM
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The MOC8106M is a 6-Pin DIP High BV CEO Phototransistor Optocouplers It consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

  • High BVCEO: 70 V Minimum
  • Closely Matched Current Transfer Ratio (CTR)
  • Minimizes Unit-to-Unit Variation
  • Current Transfer Ratio In Select Groups
  • Very Low Coupled Capacitance Along With
  • No Chip-to-Pin 6 Base Connection for Minimum Noise
  • Susceptability (CNY17FXM, MOC8106M)
  • Safety and Regulatory Approvals:
    • UL1577, 4,170 VACRMS for 1 Minute
    • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Technical Attributes

Find Similar Parts

Description Value
1.15 V
60 mA
Matte Tin
260 °C
50 mA
70 V
150@10mA %
4170 Vrms
Surface Mount
MSL 1 - Unlimited
1
-40 to 100 °C
Open Collector
6PDIP SMD White
6
8.89 x 6.6 x 3.53 mm mm
6 V
Extended Industrial
PDIP SMD

ECCN / UNSPSC / COO

Description Value
Country of Origin: PROJECTED FEE
ECCN: EAR99
HTSN: 8541498000
Schedule B: 8541498000
In Stock :  0
Additional inventory
Factory Lead Time: 105 Weeks
Price for: Each
Quantity:
Min:5000  Mult:1000  
USD $:
5000+
$0.19051
7000+
$0.18954
12000+
$0.18857
25000+
$0.1876
50000+
$0.18662