MOC8106M
6-Pin DIP High BVCEO Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
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Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: MOC8106M
Secondary Manufacturer Part#: MOC8106M
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RoHS 10 Compliant -
Tariff Charges
The MOC8106M is a 6-Pin DIP High BV CEO Phototransistor Optocouplers It consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
- High BVCEO: 70 V Minimum
- Closely Matched Current Transfer Ratio (CTR)
- Minimizes Unit-to-Unit Variation
- Current Transfer Ratio In Select Groups
- Very Low Coupled Capacitance Along With
- No Chip-to-Pin 6 Base Connection for Minimum Noise
- Susceptability (CNY17FXM, MOC8106M)
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 mA | ||
| Matte Tin | ||
| 260 | ||
| 50 mA | ||
| 70 V | ||
| 150@10mA % | ||
| 5250 Vrms | ||
| Through Hole | ||
| 1 | ||
| -55 to 100 °C | ||
| DC | ||
| 6PDIP White | ||
| 6 | ||
| 8.89 x 6.6 x 5.08 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |
Factory Lead Time: