MMBTA55LT1
500 mA, 300 V High Voltage NPN Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;
- RoHS 10 Compliant
- Tariff Charges
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
- Collector - Emitter Breakdown Voltage 60 V
- Low rDS(on) Provides Higher Efficiency and Extends Battery Life
- Miniature SOT-23 Surface Mount Package Saves Board Space
- Pb-Free Devices are available
Technical Attributes
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| Description | Value | |
|---|---|---|
| 60 | ||
| 100@100mA@1V | ||
| 3 | ||
| 150 °C | ||
| 50 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |