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MMBTA06LT1G

NPN Bipolar Transistor. ONSSPCTRNSTVU6M5P;

Manufacturer:onsemi
Avnet Manufacturer Part #: MMBTA06LT1G
Secondary Manufacturer Part#: 94W8993
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

MMBTA06LT1G is a driver transistor.

  • Collector-emitter voltage is 80VDC min (IC = 1.0mAdc, IB = 0, TA = 25°C)
  • Emitter-base breakdown voltage is 4.0VDC min (IE = 100ADC, IC = 0, TA = 25°C
  • Collector current - continuous is 500mAdc
  • Electrostatic discharge HBM Class 3B, MM Class C, CDM Class IV
  • Total device dissipation FR-5 board is 225mW max (TA = 25°C)
  • Thermal resistance, junction-to-ambient is 556°C/W max
  • DC current gain is 100 min (IC = 10mAdc, VCE = 1.0VDC, TA = 25°C)
  • Current-gain - bandwidth product is 100MHz min (IC = 10mA, VCE = 2.0 V, f = 100MHz, TA = 25°C)
  • SOT-23 package
  • Junction temperature range from -55 to +150°C

Technical Attributes

Find Similar Parts

Description Value
80 V
500 mA
100
3
150 °C
225 mW
MMBTA06L Series
SOT-23
Surface Mount
NPN
100 MHz

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541210095
Schedule B: 8541210080
In Stock :  0
Additional inventory
Factory Lead Time: 133 Weeks
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