MMBT589LT1G
30 V, 1.0 A High Current PNP Low VCE(sat) Bipolar Transistor. ONSSPCTRNSTRN4B6U;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MMBT589LT1G
Secondary Manufacturer Part#: MMBT589LT1G
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RoHS 10 Compliant -
Tariff Charges
MMBT589LT1G is a high current surface mount PNP silicon switching transistor for load management in portable applications.
- Collector-emitter voltage is -30VDC max (TA = 25°C)
- Collector-base voltage is -50VDC max (TA = 25°C)
- Emitter-base voltage is -5.0VDC max (TA = 25°C)
- Collector current - continuous is -1.0ADC max (TA = 25°C)
- Collector current - peak is -2.0A max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 310mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 403°C/W max (TA = 25°C)
- Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 30 V | ||
| 1 A | ||
| 100 | ||
| 3 | ||
| 150 °C | ||
| 310 mW | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount | ||
| PNP | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: