MMBT5551LT1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
- Halogen-free
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 160 V | ||
| 600 mA | ||
| 80 | ||
| 3 | ||
| 150 °C | ||
| 225 mW | ||
| MMBTxxxx | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |