MMBT4401LT3G
40 V, 600 mA NPN Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MMBT4401LT3G
Secondary Manufacturer Part#: 09R9451
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RoHS 10 Compliant -
Tariff Charges
MMBT4401LT3G is a NPN silicon, switching transistor.
- Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
- Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
- Collector current - continuous is 600mAdc max (TA = 25°C)
- Collector current - peak is 900mAdc max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 225mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 556°C/W max (TA = 25°C)
- Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 40 V | ||
| 600 mA | ||
| 100 | ||
| 3 | ||
| 150 °C | ||
| 225 mW | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount | ||
| NPN | ||
| 250 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: