MMBT3906LT1G
200 mA, 40 V PNP Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MMBT3906LT1G
Secondary Manufacturer Part#: 58M9148
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RoHS 10 Compliant -
Tariff Charges
MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package.
- Collector-emitter voltage is -40VDC
- Collector-base voltage is -40VDC
- Collector current - continuous is -200mA DC
- Total device dissipation is a 225mW
- Junction and storage temperature is -65 to +150°C
- 60 minimum DC current gain (IC = -0.1mAdc, VCE = -1.0Vdc)
- 250MHz typical current-gain bandwidth product (IC = -10mAdc, VCE = -20Vdc, f = 100MHz)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 40 V | ||
| 200 mA | ||
| 100 | ||
| 3 | ||
| 150 °C | ||
| 225 mW | ||
| MMBTxxxx | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount | ||
| PNP | ||
| 250 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: