MMBT3904TT1G

MMBT3904TT1G is a NPN silicon, surface mount, general purpose transistor.

• Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
• Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
• Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
• Collector current - continuous is 200mAdc max (TA = 25°C)
• Total Device Dissipation FR-5 Board is 200mW max (TA = 25°C)
• Thermal resistance junction-to-ambient is 600°C/W max (TA = 25°C)
• Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
• Noise figure is 5.0dB max (VCE = 5.0VDC, IC = 100ADC, RS = 1.0kohm, f = 1.0KHz)
• SOT-416 package
• Junction temperature range from -65 to +150°C