MJW21196G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 250 V, 16 A, 200 W, TO-247, Through Hole
Click image to enlarge
Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MJW21196G
Secondary Manufacturer Part#: MJW21196G
- RoHS 10 Compliant
- Tariff Charges
The MJW21196G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 250 V | ||
| 16 A | ||
| 20 | ||
| 3 | ||
| 150 °C | ||
| 200 W | ||
| TO-247 | ||
| Through Hole | ||
| NPN | ||
| 4 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |