MJE702G
8.0 A, 400 V PNP Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Darlington Transistors
Avnet Manufacturer Part #: MJE702G
Secondary Manufacturer Part#: MJE702G
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RoHS 10 Compliant -
Tariff Charges
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
- Collector-Emitter Breakdown Voltage 80 V
- High DC Current Gain -
hFE = 2000 (Typ) @ IC = 2.0 Adc - Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
- Choice of Packages- MJE700 and MJE800 series
- These Devices are Pb-Free and are RoHS Compliant
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 80 | ||
| 4 | ||
| 750 | ||
| 3 | ||
| 150 °C | ||
| 40 | ||
| TO-225 | ||
| Through Hole | ||
| PNP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290055 |
| Schedule B: | 8541290080 |
Factory Lead Time: