MJE210STU
5.0 A, 25 V NPN Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MJE210STU
Secondary Manufacturer Part#: MJE210STU
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RoHS 10 Compliant -
Tariff Charges
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
- Collector-Emitter Sustaining Voltage -
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc - High DC Current Gain -
hFE = 70 (Min) @ IC = 500 mAdc
hFE = 45 (Min) @ IC = 2.0 Adc
hFE = 10 (Min) @ IC = 5.0 Adc - Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc - High Current-Gain - Bandwidth Product -
fT = 65 MHz (Min) @ IC = 100 mAdc - Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB - Pb-Free Packages are Available
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 25 | ||
| 70@500mA@1V | ||
| 3 | ||
| 150 °C | ||
| TO-126 | ||
| Through Hole | ||
| PNP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: