MJE182G
3.0 A NPN Bipolar Power Transistor 80 V. ONSSPCTRNSTLT1T0R;
Click image to enlarge
Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MJE182G
Secondary Manufacturer Part#: 26K4458
-
RoHS 10 Compliant -
Tariff Charges
The MJE182G is a 80V NPN complementary plastic silicon Bipolar Transistor designed for low power audio amplifier and low current, high speed switching applications. The MJE172 (PNP) and MJE182 (NPN) are complementary devices.
- High DC current gain
- High current-gain - bandwidth
- Annular construction for low leakages
- Epoxy meets UL94V-0 flammability rating
- 100VDC Collector to base voltage (VCBO)
- 7V Emitter to base voltage (VEBO)
- 6A Peak collector current
- 1ADC Base current (IB)
- 10°C/W Thermal resistance, junction to case
- 83.4°C/W Thermal resistance, junction to ambient
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 80 | ||
| 50 | ||
| 3 | ||
| 150 °C | ||
| 12.5 | ||
| MJE180 Series | ||
| TO-225 | ||
| Through Hole | ||
| NPN | ||
| 50 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: