MJD210G
5.0 A, 25 V PNP Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
- RoHS 10 Compliant
- Tariff Charges
The MJD210G is a 5A PNP bipolar Power Transistor designed for low voltage, low power, high gain audio amplifier applications.
- Complementary device
- High current-gain - bandwidth product (fT = 65MHz minimum @ IC = 100mA DC)
- AEC-Q101 qualified and PPAP capable
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 25 V | ||
| 5 A | ||
| 70 | ||
| 3 | ||
| 150 °C | ||
| 12.5 W | ||
| AEC-Q101 | ||
| TO-252 (DPAK) | ||
| Surface Mount | ||
| PNP | ||
| 65 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |