MJD112T4G
Darlington Transistor, NPN, 3 Pins
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Darlington Transistors
Avnet Manufacturer Part #: MJD112T4G
Secondary Manufacturer Part#: MJD112T4G
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RoHS 10 Compliant -
Tariff Charges
The MJD112T4G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- Surface-mount replacements for TIP110 to TIP117 series
- AEC-Q101 qualified and PPAP capable
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 100 V | ||
| 2 A | ||
| 1000 | ||
| 3 | ||
| 150 °C | ||
| 20 W | ||
| AEC-Q101 | ||
| TO-252 (DPAK) | ||
| Surface Mount | ||
| NPN |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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