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MJD112RLG

2.0 A, 100 V NPN Darlington Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;

Manufacturer:onsemi
Avnet Manufacturer Part #: MJD112RLG
Secondary Manufacturer Part#: MJD112RLG
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("1"" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel (""T4"" Suffix)
  • Surface Mount Replacements for TIP110-TIP117 Series
  • Monolithic Construction With Built-in Base-Emitter Shunt Resistors
  • High DC Current GainhFE = 2500 (Typ) @ IC = 2.0 Adc
  • Complementary Pairs Simplifies Designs
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • PbFree Packages are Available
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Technical Attributes

Find Similar Parts

Description Value
100
2
1000
3
150 °C
20
AEC-Q101
TO-252 (DPAK)
Surface Mount
NPN

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290040
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 112 Weeks
Price for: Each
Quantity:
Min:1800  Mult:1800  
USD $:
1800+
$0.40864
3600+
$0.39956
7200+
$0.39048
14400+
$0.3814
28800+
$0.37232