MJB44H11G
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt. ONSSPCTRNSTLT1T0R;
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Manufacturer:onsemi
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: MJB44H11G
Secondary Manufacturer Part#: MJB44H11G
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RoHS 10 Compliant -
Tariff Charges
The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
- Fast switching speeds
- Complementary pairs simplifies designs
- ESD rating - 3B 8000V human body model, C 400V machine model
- 5V Emitter to base voltage (VEBO)
- 2.5°C/W Thermal resistance, junction to case
- 7.5°C/W Thermal resistance, junction to ambient
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 80 V | ||
| 10 A | ||
| 40 | ||
| 3 | ||
| 150 °C | ||
| 50 W | ||
| AEC-Q101 | ||
| TO-263 (D2PAK) | ||
| Surface Mount | ||
| NPN | ||
| 100 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
Factory Lead Time: