MICROFJ-30035-TSV-TR1
Silicon Photomultiplier Sensors, J-Series (SiPM) 3 mm, 35 µm, TSV
- RoHS 10 Compliant
- Tariff Charges
ON Semiconductor’s J-Series low-light sensors feature a high PDE (photon detection efficiency) that is achieved using a high-volume, P-on-N silicon foundry process. The J-Series sensors incorporate major improvements in the transit time spread which results in a significant improvement in the timing performance of the sensor. J-Series sensors are available in different sizes (3 mm, 4 mm and 6 mm) and use a TSV (Through Silicon Via) process to create a package with minimal deadspace, that is compatible with industry standard lead-free, reflow soldering processes.
- High-density microcells
- J-Series sensors feature ON Semiconductor's unique "fast output"" terminal
- Temperature stability of 21.5 mV/°C
- Exceptional breakdown voltage uniformity of ±250 mV
- Available in a reflow solder compatible TSV chip-scale package
- Ultra-low dark count rates of 50 kHz/mm2 typical
- Optimized for high-performance timing applications, such as ToF-PET
- Bias voltage of less than 30 V
- 3 mm, 4 mm and 6 mm sensor sizes
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 3mm x 3mm | ||
| 3.16mm x 3.16mm | ||
| 35 | ||
| 8 | ||
| 85 °C | ||
| -40 °C | ||
| 420 | ||
| ODCSP | ||
| Silicon Photomultiplier |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541491050 |
| Schedule B: | 8541491050 |