MCT5211TVM
6-Pin DIP Low Input Current Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
- RoHS 10 Compliant
- Tariff Charges
The MCT5211M devices consist of a high-efficiency AIGaAs infrared emitting diode coupled with an NPN phototransistor in a six-pin dual-in-line package. The devices are well suited for CMOS to LSTT/TTL inter-faces, offering 250% CTRcE(SAT) with 1 mA of LED input current. With an LED input current of 1.6 mA, data rates to 20K bits/s are possible. Both can easily interface LSTTL to LSTTL/TTL, and with use of an external base-to-emitter resistor data rates of 100K bits/s can be achieved.
- High CTRcE(SAT) Comparable to Darlingtons
- High Common Mode Transient Rejection: 5 kV/has
- Data Rates Up to 150 kbits/s (NRZ)
- Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 50 mA | ||
| Matte Tin | ||
| 260 | ||
| 150 mA | ||
| 30 V | ||
| 5250 Vrms | ||
| Through Hole | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6PDIP White | ||
| 6 | ||
| 8.89 x 6.86 x 5.08 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |