MBRAF3200T3G

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage - 200 V
• 150°C Operating Junction Temperature
• Guard-Ring for Stress Protection
• This is a Pb-Free Device
  
  
• Pb-Free Package is Available