J113
2.0 mA, 35 V N-Channel JFET Chopper Transistor.
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RoHS 10 Compliant -
Tariff Charges
- Source and drain are interchangeable
- Gate to source breakdown voltage of 35V
- Gate to source cut-off voltage of 3V
- Zero gate voltage drain current of 2mA
- Power dissipation (pd) of 625mW
- Operating junction temperature of -55°C to 150°C
- Drain source on resistance of 100 Ohm
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 35 V | ||
| 3 V | ||
| null | ||
| 150 °C | ||
| null | ||
| null | ||
| null | ||
| Through Hole | ||
| 2 µA |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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