HGTG20N60B3

The HGTG20N60B3 is Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 deg C and 150 deg C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

• 40A, 600V at TC = 25 deg C
• 600 V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150 deg C
• Short Circuit Rated
• Low Conduction Loss
• Related Literatures
  • TB334 "Guidelines for Soldering Surface Mount Components to PC Boards