H11G2M
6-Pin DIP High Voltage Photodarlington Output Optocoupler. ONSSPCISTNJZ8E4V;
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Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: H11G2M
Secondary Manufacturer Part#: 78M1387
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RoHS 10 Compliant -
Tariff Charges
The H11G2M is a 80V 6-pin DIP high voltage photodarlington-type Optically Coupled Optocoupler consist of gallium arsenide infrared emitting diode coupled with a silicon Darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
- High sensitivity to low input current (minimum 500% CTR at IF= 1mA)
- Low leakage current at elevated temperature (maximum 100µA at 80°C)
Technical Attributes
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| Description | Value | |
|---|---|---|
| 60 mA | ||
| Matte Tin | ||
| 260 | ||
| 80 V | ||
| 5250 Vrms | ||
| Through Hole | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6PDIP White | ||
| 6 | ||
| 8.89 x 6.6 x 3.53 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |
Factory Lead Time: