H11F3SR2M

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

• As a remote variable resistor
  • = 100O to = 300MO
  • = 15pF shunt capacitance
  • = 100GO I/O isolation resistance
• As an analog switch
  • Extremely low offset voltage
  • 60 Vpk-pk signal capability
  • No charge injection or latch-up
  • UL recognized (File #E90700)