H11AG1SR2M
6-Pin DIP Phototransistor Output Optocoupler. ONSSPCISTNJZ8E4V;
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Manufacturer:onsemi
Product Category:
Optoelectronics, OptoCouplers, Transistor & Photovoltaic Output PhotoCouplers
Avnet Manufacturer Part #: H11AG1SR2M
Secondary Manufacturer Part#: H11AG1SR2M
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RoHS 10 Compliant -
Tariff Charges
The H11AG1M series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.
- High efficiency low degradation liquid epitaxial IRED
- Logic level compatible, input and output currents, with CMOS and LS/TTL
- High DC current transfer ratio at low input currents (as low as 200µA)
- Safety and Regulatory Approvals
- UL 1577, 4,170VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 50 mA | ||
| Matte Tin | ||
| 260 | ||
| 50 mA | ||
| 30 V | ||
| 5300 Vrms | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| -40 to 100 °C | ||
| DC | ||
| 6PDIP SMD White | ||
| 6 | ||
| 8.89 x 6.6 x 3.53 mm | ||
| PDIP SMD |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |
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