FSFR1800HSL
Advanced Integrated Power Switch (FPS™) for 260W Half-Bridge Resonant Converter
- RoHS 10 Compliant
- Tariff Charges
The FSFR-HS is a highly integrated power switch designed for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FSFR-HS simplifies designs while improving productivity and performance. The FSFR-HS combines power MOSFETs, a high-side gate-drive circuit, an accurate current- controlled oscillator, and built-in protection functions. The high-side gate-drive circuit has a common-mode noise cancellation capability, which provides stable operation with excellent noise immunity Using zero- voltage-switching (ZVS) technique dramatically reduces the switching losses and significantly improves efficiency. The ZVS also reduces the switching noise noticeably, even though the operating frequency increases. It allows a small Electromagnetic Interference (EMI) filter, besides the high operating frequency, to reduce the volume of the resonant tank and to increase power density. The FSFR-HS can be applied to resonant converter topologies such as series resonant, parallel resonant, and LLC resonant converters.
- Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology
- High Efficiency through Zero Voltage Switching (ZVS)
- Built-in High-Side Gate Driver IC
- Internal IJniFETTMs with Fast-Recovery Type Body Diode (tr = 160 ns Typical)
- Fixed Dead Time (350 ns) Optimized for MOSFETs
- Operating Frequency Up to 600 kHz for Soft-Start
- Self Auto-Restart Operation for All Protections, Despite External LVcc Bias
- Line UVLO with Programmable Hysteresis Level
- Simple On/Off with Line UVLO Pin
- Easy Configuration and Compatibility with FAN7930 for Line UVLO without External Components
- Protection Functions: Over-Voltage Protection (OVP), Over-Current Protection (OCP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| SIP L-Forming | ||
| Matte Tin | ||
| 7 A | ||
| Through Hole | ||
| 9 | ||
| 1 | ||
| -0.3 to 525 V | ||
| -40 to 130 °C | ||
| 130 °C | ||
| -40 °C | ||
| 9SIP | ||
| 9 | ||
| 26.2 x 3.4 x 10.7 mm | ||
| SIP | ||
| 7 mA | ||
| 0.77 Ohm | ||
| High Side|Low Side |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |