FQU13N06LTU
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 m?, IPAK
- RoHS 10 Compliant
- Tariff Charges
The FQU13N06LTU is a QFET® enhancement-mode N-channel Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- Low level gate drive requirements allowing direct operation form logic drivers
- 100% avalanche tested
- 4.8nC typical low gate charge
- 17pF typical low Crss
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 11 | ||
| 115 | ||
| 60 | ||
| 2.5 | ||
| 3 | ||
| 150 °C | ||
| 28 | ||
| IPAK | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |