FQT7N10LTF
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mO, SOT-223
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Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FQT7N10LTF
Secondary Manufacturer Part#: 15R3448
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RoHS 10 Compliant -
Tariff Charges
The FQT7N10L is a N-Channel QFET MOSFET 100V, 1.7A, 350mO This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
- 1.7A, 100V, RDS(on) = 350mO(Max.) @VGS = 10 V, ID = 0.85A
- Low gate charge ( Typ. 5.8nC)
- Low Crss ( Typ. 10pF)
- 100% avalanche tested
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 1.7 A | ||
| 350 mOhm | ||
| 100 V | ||
| 2 V | ||
| 4 | ||
| 150 °C | ||
| 2 W | ||
| SOT-223 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: