FQD3P50TM
Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface Mount
Click image to enlarge
Manufacturer:onsemi
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: FQD3P50TM
Secondary Manufacturer Part#: FQD3P50TM
-
RoHS 10 Compliant -
Tariff Charges
This P-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
- -2.1A, -500V, RDS(on) = 4.9O(Max.) @VGS = 10 V, ID = -1.05A
- Low gate charge ( Typ. 18nC)
- Low Crss ( Typ. 9.5pF)
- 100% avalanche tested
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 2.1 A | ||
| 4.9 Ohm | ||
| 500 V | ||
| 5 V | ||
| 3 | ||
| 150 °C | ||
| 50 W | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: