FGA25N120ANTDTU
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
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Manufacturer:onsemi
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: FGA25N120ANTDTU
Secondary Manufacturer Part#: FGA25N120ANTDTU
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RoHS 10 Compliant -
Tariff Charges
The FGA25N120ANTD is a 1200V, 25A NPT Trench IGBT in through hole TO-3P package. IGBT offers superior conduction, switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application.
- Collector emitter voltage VCES is 1.2KV
- Collector current at 25°C is 50A
- Diode continuous forward current at 25°C is 50A
- Operating junction temperature range from - 55°C to 150°C
- Maximum power dissipation at 25°C is 312W
- Collector to emitter saturation voltage is 2.65V at IC = 50 A
- Maximum diode forward voltage is 3V at IF = 25A
- Diode peak reverse recovery current is 40A
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.65 V | ||
| 1.2 kV | ||
| 50 | ||
| 3 | ||
| 150 °C | ||
| 312 W | ||
| TO-3P | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: