FFSH50120A

FFSH50120A is a 50A, 1200V, Silicon Carbide (SiC) schottky diode - EliteSiC. Silicon Carbide (SiC) schottky diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Typical applications include general purpose, SMPS, solar inverter, UPS, power switching circuits.

• Max junction temperature 175C°
• Avalanche rated 44mJ
• High surge current capacity
• Positive temperature coefficient
• Ease of paralleling
• No reverse recovery / no forward recovery
• 252nC total capacitive charge at V = 800V
• 1.75V max forward voltage at IF = 50A, TC = 25°C
• 200µA max reverse current at VR = 1200V, TC = 25°C
• 2 pin TO-247 package