FFSH3065B

FFSH3065B is a 30A, 650V, Silicon Carbide (SiC) schottky diode - EliteSiC. Silicon Carbide (SiC) schottky diode uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Typical applications include automotive HEV-EV onboard chargers, automotive HEV-EV DC-DC converters.

• Max junction temperature 175C°
• Avalanche rated 144mJ
• High surge current capacity
• Positive temperature coefficient
• Ease of paralleling
• No reverse recovery / no forward recovery
• AEC-Q101 qualified and PPAP capable
• 1.7V max forward voltage at IF = 30A, TC = 25°C
• 40µA max reverse current at VR = 650V, TC = 25°C
• 2 pin TO-247 package